inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUX45 description low collector saturation voltage- : v ce(sat) = 1.0v(max.) @ i c = 1a high switching speed applications designed for high speed, high voltage, high power applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage 500 v v cex collector-emitter voltage v be = -1.5v 500 v v cer collector-emitter voltage r be = 100 500 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 7 v i c collector current-continuous 5 a i cm collector current-peak 7 a i b base current-continuous 1 a p c collector power dissipation @t c =25 120 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.46 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUX45 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 25mh 500 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 1a; i b = 0.125a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 2a; i b = 0.4a 2.0 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.4a 2.0 v i ceo collector cutoff current v ce = 400v; i b = 0 1.0 ma i cex collector cutoff current v ce = 500v;v be = -1.5v v ce = 500v;v be = -1.5v;t c =125 1.0 5.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a; v ce = 4v 15 45 h fe-2 dc current gain i c = 2a; v ce = 4v 8 f t current-gainbandwidth product i c = 1a; v ce = 15v 8 mhz switching times t on turn-on time i c = 2a; i b1 = -i b2 =0.4a;v cc = 100v 1.0 s t s storage time 5.0 s t f fall time 1.2 s
|
